Ito溅射靶的生产方法

Production method of ITO (Indium Tin Oxide) sputtering target

  • Inventors: ZHANG TIANSHU
  • Assignees: 张天舒
  • Publication Date: September 04, 2013
  • Publication Number: CN-103274683-A

Abstract

本发明的主要目的是提供一种ITO溅射靶生产方法,是将含Sn2+盐溶液与纳米In2O3粉体制成的In2O3悬浮液进行混匀,然后搅拌缓慢加入沉淀剂进行沉淀处理,沉淀处理完全后进行静置陈化,静置陈化后回收沉淀物并洗涤、干燥、预烧得到In2O3表面均匀包覆有SnO2的包覆粉体;以及将包覆粉体进行成型烧结处理后制得ITO溅射靶。通过沉淀剂对含Sn2+盐溶液和In2O3悬浮液的混合液进行沉淀处理以及预烧处理,可有效地在In2O3颗粒表面均匀分散SnO2成分,形成In2O3表面均匀包覆有SnO2的包覆粉体,在后续的致密化过程中不产生SnO2成分的偏析;另一方面,由于In2O3颗粒表面包覆了低结晶度的SnO2层,可促进烧结过程中物质传输,加速ITO溅射靶的致密化,有利于生产出高质量的、微结构均匀的ITO溅射靶,避免在溅射过程中出现毒化现象,以此为溅射靶可制备出满足高端平面显示行业所需求ITO薄膜。
The invention mainly aims to provide a production method of an ITO (Indium Tin Oxide) sputtering target. The method comprises the steps of uniformly mixing an Sn<2+>-containing salt solution with an In2O3 suspension liquid made from nanometer In2O3 powder, stirring and slowly adding a precipitator to precipitate, standing and aging after the precipitation is completed, recovering the precipitate after the standing and the aging, washing, drying and pre-sintering to obtain a coating powder of In2O3 uniformly coated with SnO2 on the surface and carrying out forming sintering on the coating powder to obtain the ITO sputtering target. According to the production method provided by the invention, a mixed liquid of the Sn<2+>-containing salt solution and the In2O3 suspension liquid is precipitated through the precipitator and pre-sintered, so that the SnO2 component can be effectively uniformly dispersed on the surface of In2O3 particles to form the coating powder of In2O3 uniformly coated with SnO2 on the surface and no segregation of the SnO2 component happens in the subsequent densification process; and on the other hand, a low-crystallinity SnO2 layer is coated on the surface of the In2O3 particles, so that the material transfer in the sintering process can be promoted, the densification of the ITO sputtering target is accelerated, the production of high-quality uniform-microstructure ITO sputtering targets is facilitated, the poison phenomenon is avoided from occurring in the sputtering process and ITO films meeting the requirements of high-end flat panel display industries can be prepared by adopting the sputtering target.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    CN-101812665-AAugust 25, 2010北京化工大学单相结构-高密度铟锡氧化物靶材的制备方法
    CN-102795662-ANovember 28, 2012天津大学一种制备有序介孔氧化铟锡材料的方法
    US-2008173962-A1July 24, 2008Samsung Corning Co., Ltd.Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle