非晶质氮化硅膜及其制造方法

Amorphous silicon nitride film and method for producing same

Abstract

本发明的非晶质氮化硅膜是使用表面波等离子体CVD装置在成膜对象物上成膜而成,且对于该非晶质氮化硅膜来说,表面波等离子体CVD装置的介电窗与所述成膜对象物的距离为175mm以上,且是在成膜对象物的温度为200℃以下的条件下成膜,并且利用卢瑟福背散射(RBS)法及卢瑟福氢正散射(HFS)法测定的该非晶质氮化硅膜的膜中氢浓度为25atm%以下。
The amorphous silicon nitride film of the present invention is formed on a film formation object using a surface-wave plasma CVD apparatus. The amorphous silicon nitride film is formed under conditions where the distance between the dielectric window of the surface-wave plasma CVD apparatus and the film formation object is 175 mm or more and the temperature of the film formation object is 200 DEG C or lower. The hydrogen concentration in the amorphous silicon nitride film is 25 atm% or lower as measured by the Rutherford backscattering spectrometry (RBS) method and the hydrogen forward scattering spectrometry (HFS) method.

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Cited By (1)

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    CN-105259194-AJanuary 20, 2016宜昌后皇真空科技有限公司Measuring method for modulation period and uniformity of multiple layers of films